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Samsung announces 1TB smartphone storage chip just in time for Galaxy S10+

Samsung Electronics announced the industry’s first 1TB eUFS 2.1 (embedded Universal Flash Storage). The chip has already entered mass production so we can expect the next-generation premium smartphones to feature it and the Galaxy S10+ will likely to be the first one.

The new 1TB eUFS chip is just as big as the previous 512GB chip (11.5 x 13mm) while holding double the storage capacity by combining 16 stacked V-NAND flash memory layers and a newly developed controller. But Samsung was able to make substantial speed gains as well.

The new chip boasts sequential read speeds of up to 1000 MB/s and sequential write speed of 260 MB/s. For the record, a standard 2.5-inch SATA SSD caps at around 540 MB/s read speeds, so this is mighty impressive. Compared to the previous generation of 512GB storage, the 1TB chip’s random read speeds have increased by 38%.

Here’s a small table comparing different internal memory solutions and their performance:

Memory
Sequential Read
Sequential Write
Random Read
Random Write
1TB eUFS 2.1
1000 MB/s
260 MB/s
58,000 IOPS
50,000 IOPS
512GB eUFS 2.1
860 MB/s
255 MB/s
42,000 IOPS
40.000 IOPS
256GB UFS Card
530 MB/s
170 MB/s
40,0000 IOPS
35.000 IOPS
256 eUFS 2.0
850 MB/s
260 MB/s
45,000 IOPS
40,000 IOPS
128GB eUFS 2.0
300 MB/s
150 MB/s
19,000 IOPS
14,000 IOPS

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